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| SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20 COMPLEMENTARY TYPE PARTMARKING DETAIL 7 ZVP3310F D S ZVN3310F MR G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -300 20 50 50 15 5 8 8 8 8 -100 -1.5 -3.5 -20 -1 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 75 -1.2 20 UNIT V mA A V mW C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125C(2) VDS=-25 V, VGS=-10V VGS=-10V, ID=-150mA VDS=-25V, ID=-150mA mA Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 436 ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -10 -0.6 I - Drain Current (Amps) -8 -0.4 -6 -0.2 Drain Source -7V -6V -5V -4 ID= -0.3A -0.15A -0.075A -2 0 -2 -4 -6 -8 -4V -10 0 0 -2 -4 -6 -8 -10 V VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Saturation Characteristics Voltage Saturation Characteristics 100 50 gB -Transconductance (mS) 90 80 70 60 50 40 30 20 10 0 0 -0.1 -0.2 -0.3 -0.4 C-Capacitance (pF) VDS= -10V 40 VGS= 0V f= 1MHz 30 20 Ciss Coss Crss 0 -20 -40 -60 -80 10 I 0 -0.5 -0.6 -0.7 -0.8 ID- Drain Current (Amps) VDS-Drain Source Voltage (Volts) Transconductance v drain current Capacitance v drain-source voltage -16 2.6 2.4 2.2 -Gate Source Voltage (Volts) -14 and V -12 -10 -8 VGS= -10V ID= -150mA 2.0 1.8 1.6 -4 -2 0 0 -25V -50V -100V ID= 0.2A 0.4 0.6 0.8 1.0 1.2 Normalised R -6 VDS= 1.4 1.2 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS= VDS ID= -1mA 5 V/ 0.2 Q-Charge (nC) Tj-Junction Temperature (C) Gate charge v gate-source voltage Normalised RDS(on) and VGS(th) v Temperature 3 - 437 |
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